发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <p>A semiconductor storage device has memory cells (501, 502) for storing data, bit lines (BL1, BL2) that input/output data from/to a memory cell, a sense amplifier (506a) connected to the bit lines to amplify data on the bit lines, and a switching transistor (505a) for connecting/disconnecting the bit lines connected to the memory cells to/from the bit lines connected to the sense amplifier. The switching transistor makes different actions between the first memory cell access and the second memory cell access.</p>
申请公布号 WO2004102578(A1) 申请公布日期 2004.11.25
申请号 WO2003JP05932 申请日期 2003.05.13
申请人 FUJITSU LIMITED;TOMITA, HIROYOSHI;UCHIDA, TOSHIYA 发明人 TOMITA, HIROYOSHI;UCHIDA, TOSHIYA
分类号 G11C7/12;G11C11/406;G11C11/4094;(IPC1-7):G11C11/406 主分类号 G11C7/12
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