| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for etching that is improved in selectivity and productivity, and to provide an RIE system. <P>SOLUTION: The method for etching includes a step of placing a substrate 2 to be treated in a chamber 1, a step of introducing a gas containing a fluorocarbon gas into the chamber 1, and a sep of generating plasma 9 in the chamber 1 by simultaneously or alternately impressing a first high frequency and a second high frequency higher than the first high frequency. The method also includes a step of etching the substrate 2 with the plasma 9. The C/F ratio of the fluorocarbon gas is adjusted to ≥0.65. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
