| 摘要 |
PROBLEM TO BE SOLVED: To improve the cross-sectional profile of a resist pattern being obtained by immersion lithography. SOLUTION: After a resist film 102 composed of a chemically amplified resist material is formed, pattern exposure is performed by irradiating the resist film 102 with an exposure light 104 while supplying water 103 containing an acid generating agent, i.e. triphenyl sulfonium nafrate(onium salt), and being stored temporarily at a solution storing section while circulating. The resist film 102 subjected to pattern exposure is then subjected to post bake and developed using alkaline developer thus obtaining a resist pattern 105 composed of the unexposed part 102b of the resist film 102 and having a good cross-sectional profile. COPYRIGHT: (C)2005,JPO&NCIPI |
