发明名称 SURFACE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a surface treatment apparatus which can reduce the energy of an electron beam and simplify a constitution. SOLUTION: The surface treatment apparatus 1 is equipped with a mounting stand 3 for mounting almost horizontally a semiconductor wafer W in a vacuum chamber 2, an electron beam irradiation mechanism 6 which is arranged at a ceiling of the vacuum chamber 2 and irradiates the semiconductor wafer W with an electron beam, and a self-field generator 13 arranged between the mounting stand 3 and the electron beam irradiation mechanism 6. The self-field generator 13 is constituted of a plurality of electro static charge boards 13a which are arranged in face to face with each of irradiation windows 6b in the electron beam irradiation mechanism 6. The electro static charge board 13a is a plate-like object, has five slits 13b which passes the electron beam on the facing surface which faces the irradiation windows 6b, and is provided with an internal component 13c constituted of a conductor, an external component 13d constituted of an insulator covering the internal component 13c, and a wire 13e which grounds the internal component 13c. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004335667(A) 申请公布日期 2004.11.25
申请号 JP20030128303 申请日期 2003.05.06
申请人 TOKYO ELECTRON LTD 发明人 HONDA MINORU;NONAKA TATSU;MITSUOKA KAZUYUKI
分类号 G21K5/04;G03F7/20;G03F7/40;H01J37/30;H01J37/317;H01L21/027;H01L21/31;(IPC1-7):H01L21/027 主分类号 G21K5/04
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