发明名称 |
METHOD OF MANUFACTURING XENON DIFLUORIDE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of efficiently manufacturing xenon difluoride used as an isotropic etching gas for semiconductor manufacture in an electronic field. SOLUTION: Xenon and fluorine are reacted with each other using a reactor having a cooling solidifying instrument. As a catalyst, nickel fluoride or cobalt fluoride is used. COPYRIGHT: (C)2005,JPO&NCIPI
|
申请公布号 |
JP2004331465(A) |
申请公布日期 |
2004.11.25 |
申请号 |
JP20030130924 |
申请日期 |
2003.05.09 |
申请人 |
CENTRAL GLASS CO LTD |
发明人 |
SHIBAYAMA SHIGERO;OHASHI MITSUYA |
分类号 |
C01B23/00;B01J27/128;(IPC1-7):C01B23/00 |
主分类号 |
C01B23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|