发明名称 METHOD OF MANUFACTURING XENON DIFLUORIDE
摘要 PROBLEM TO BE SOLVED: To provide a method of efficiently manufacturing xenon difluoride used as an isotropic etching gas for semiconductor manufacture in an electronic field. SOLUTION: Xenon and fluorine are reacted with each other using a reactor having a cooling solidifying instrument. As a catalyst, nickel fluoride or cobalt fluoride is used. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004331465(A) 申请公布日期 2004.11.25
申请号 JP20030130924 申请日期 2003.05.09
申请人 CENTRAL GLASS CO LTD 发明人 SHIBAYAMA SHIGERO;OHASHI MITSUYA
分类号 C01B23/00;B01J27/128;(IPC1-7):C01B23/00 主分类号 C01B23/00
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