发明名称 OXIDE THIN FILM MANUFACTURING METHOD AND DEVICE THEREOF
摘要 PROBLEM TO BE SOLVED: To prevent hydrogen voids from being densely formed when an oxide thin film is made of solid material. SOLUTION: Solid organic metal material is dissolved into an organic solvent, and the organic solvent loaded with the organic metal material is vaporized into material gas. A method of manufacturing the oxide thin film comprises a thermal decomposition means 1 for selectively thermally decomposing an organic solvent component contained in the above material gas, a trapping means 2 for trapping the decomposition products of the thermally decomposed organic solvent, and a film depositing means 3 for mixing oxidizing gas into the material gas from which the solvent component has been removed to deposit an oxide thin film on a deposition substrate. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004335607(A) 申请公布日期 2004.11.25
申请号 JP20030127194 申请日期 2003.05.02
申请人 FUJITSU LTD 发明人 MARUYAMA KENJI
分类号 C23C16/40;C23C16/448;H01L21/31;H01L21/8246;H01L27/105;(IPC1-7):H01L21/31 主分类号 C23C16/40
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