| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stencil mask with which an appropriate pattern can be formed through one time of exposure in a case where fine patterns and rough patterns coexist, and to provide a method of manufacturing the mask. <P>SOLUTION: In the method of manufacturing the stencil mask for charged particle beam, a plurality of pattern-like plotting openings are formed in a film. All of the pattern-like plotting openings are formed by cutting linear portions having a prescribed width t from the film. Preferably, the plotting openings are formed by cutting the insides of the peripheral edge boundaries of designed value patterns of the openings in contour-like states. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
