| 摘要 |
PROBLEM TO BE SOLVED: To produce a metal contact of an emitter and a base reducing a base resistance without using a high-precision alignment or etching control in a hetero-junction bipolar transistor HBT. SOLUTION: A method for producing the hetero-junction bipolar transistor includes forming an etching mask (96) on an emitter cap layer (118), forming a reentry shape (100) by selectively etching the exposed portion the cap layer, and exposing a portion of the cap layer, and exposing a portion of an emitter layer (116). By selectively etching the exposed portion of the emitter layer, a portion of the base layer (114) is exposed. Metal layers (22, 24) are formed on the exposed portions of the base layer and the cap layer. COPYRIGHT: (C)2005,JPO&NCIPI
|
