| 摘要 |
PROBLEM TO BE SOLVED: To provide the unit pixel of a CMOS image sensor in which reset efficiency of a photodiode can be prevented from lowering. SOLUTION: The unit pixel of a CMOS image sensor comprises a photodiode (21), a transfer transistor (22) having a source-drain region formed between the photodiode and a floating diffusion region (23) and a gate being applied with a control signal (Tx), a reset transistor (24) having a source-gate region formed between the floating diffusion region and the power supply voltage end and a gate being applied with a control signal (Rx), a drive transistor (25) having a gate connected with the floating diffusion region and a drain connected with the power supply voltage end, and a select transistor (56) having a gate being applied with a control signal (Sx), a source connected with the output end and a drain connected with the source of the drive transistor. COPYRIGHT: (C)2005,JPO&NCIPI
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