| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal wiring forming method in which reliability of a metal wiring is secured by selectively forming a titanium or ruthenium metal, which is capable of preventing diffusion of a copper selectively, at an interface between a copper (Cu) metal wiring having no head for electromigration and a capping film. SOLUTION: This method comprises a step for forming an interlayer insulation film on a semiconductor substrate, a step for forming a metal wiring form pattern by etching the interlayer insulation film, a step for forming a diffusion prevention film on a resulting material where the metal wiring form pattern is formed, along a level difference, a step for forming a copper film on the diffusion prevention film, a step for forming a copper metal wiring by chemical mechanical polishing the copper film and the diffusion prevention film above the interlayer insulation film, a step for selectively adsorbing the titanium or ruthenium metal on the copper metal wiring, and a step for performing annealing for the adsorbed titanium or ruthenium metal. COPYRIGHT: (C)2005,JPO&NCIPI
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