SEMICONDUCTOR SUBSTRATE AND ITS PRODUCING PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a process for producing a semiconductor substrate having a gallium arsenide layer. SOLUTION: A gallium arsenide substrate 40 is produced through a step for producing a first substrate 10 having a germanium substrate 11, a gallium arsenide layer 12 arranged on the germanium substrate 11, and an ion implantation layer 13 formed on at least any one of the germanium substrate 11 and the gallium arsenide layer 12, a step for producing a substrate 30 by bonding the first substrate 10 and a second substrate 20, and a step for dividing the bonded substrate 30 at the part of the ion implantation layer 13. COPYRIGHT: (C)2005,JPO&NCIPI