| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which retains a memory of two bits by one transistor and can be further reduced in size at the same time. SOLUTION: A gate insulating film 12 and a gate electrode 13 are formed on a first conductivity-type semiconductor substrate 11, charge holders 61 and 62 are formed on side walls of the gate electrode 13, respectively, second conductivity-type diffusion regions 17 and 18 are provided to the semiconductor substrate 11, and a channel region 41 is arranged in the semiconductor substrate 11 under the gate electrode 13. The charge holders 61 and 62 are set independent of the gate insulating film 12 and can be reduced in size. The charge holders 61 and 62 are equipped with carbon material regions where carbon nanotubes chemically and mechanically tough and capable of withstanding rewriting carried out a number of times can be used, so that the semiconductor memory device can be further reduced in thickness and size. COPYRIGHT: (C)2005,JPO&NCIPI
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