| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which is capable of reducing the residual stress left inside a semiconductor substrate, improving the gate insulating film in quality, and equipped with a dual gate insulating film structure. SOLUTION: The method of manufacturing a semiconductor device comprises processes of forming a first active region 10 and a second active region 20 on the main surface of a silicon substrate 1, forming a first thermal oxide film 3a on the main surface of the silicon substrate 1, making the second active region 20 exposed by selectively removing a prescribed part of the first thermal oxide film 3a, forming a second thermal oxide film 3b on the active regions 10 and 20, subjecting the thermal oxide films 3a and 3b to an annealing process carried out at a temperature higher than the forming temperature of the second thermal oxide film 3b, and forming a first gate electrode 6a and a second gate electrode 6b through the intermediary of the thermal oxide films 3a and 3b which have been subjected to annealing. COPYRIGHT: (C)2005,JPO&NCIPI
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