发明名称 |
Capacitors including a cavity containing a buried layer and methods of manufacturing the same |
摘要 |
Capacitors include an integrated circuit (semiconductor) substrate and an interlayer dielectric disposed on the integrated circuit substrate and including a metal plug therein. A lower electrode is disposed on the interlayer dielectric and contacting the metal plug. The lower electrode includes a cavity therein and a buried layer in the cavity. The buried layer is an oxygen absorbing material. A dielectric layer disposed on the lower electrode and an upper electrode is disposed on the dielectric layer. The lower electrode may be a noble metal layer. The buried layer may fill in the cavity and may not contain oxygen (O2) when initially formed.
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申请公布号 |
US2004232463(A1) |
申请公布日期 |
2004.11.25 |
申请号 |
US20040795020 |
申请日期 |
2004.03.05 |
申请人 |
CHUNG SUK-JIN;KIM WAN-DON;YOO CHA-YOUNG;LEE KWANG-HEE;LIM HAN-JIN;LEE JIN-IL |
发明人 |
CHUNG SUK-JIN;KIM WAN-DON;YOO CHA-YOUNG;LEE KWANG-HEE;LIM HAN-JIN;LEE JIN-IL |
分类号 |
H01L21/8242;H01L21/02;(IPC1-7):H01L29/74 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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