发明名称 Dielectric focus ring for wafer located in processing position on electrostatic chuck in plasma etching installation with potential difference between wafer potential and focus ring potential
摘要 <p>Dielectric focus ring (10) is intended for wafer (2) in processing position on electrostatic chuck (3) in plasma etching appliance. Chuck contains electric contact with electrode. Between focus ring potential and wafer potential can exist potential difference .Structure (11) for targeted influencing of potential profile inside focus ring contains at least one material with other property than dielectric part of focus ring, such as other dielectric constant and/or conductivity.</p>
申请公布号 DE10319894(A1) 申请公布日期 2004.11.25
申请号 DE2003119894 申请日期 2003.04.28
申请人 INFINEON TECHNOLOGIES AG 发明人 SABISCH, WINFRIED;KERSCH, ALFRED;WEGE, STEPHAN;RUDOLPH, UWE
分类号 H01J37/32;H01L21/683;(IPC1-7):H01J37/32;H01L21/68 主分类号 H01J37/32
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