发明名称 |
PROCESS FOR PRODUCING GROUP III NITRIDE COMPOUND SEMICONDUCTOR |
摘要 |
A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere. <IMAGE>
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申请公布号 |
EP1479795(A1) |
申请公布日期 |
2004.11.24 |
申请号 |
EP20030707019 |
申请日期 |
2003.02.24 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
NISHIJIMA, KAZUKI;SENDA, MASANOBU;CHIYO, TOSHIAKI;ITO, JUN;SHIBATA, NAOKI;HAYASHI, TOSHIMASA |
分类号 |
C30B29/38;C30B25/02;C30B25/18;C30B29/40;H01L21/20;H01L21/205;H01L33/12;H01L33/16;H01L33/32;(IPC1-7):C30B29/38;H01L33/00 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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