| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to improve step coverage capable of being obtained by a CVD(chemical vapor deposition) process by depositing a copper thin film by a PVD(physical vapor deposition) process and by performing a heat treatment on the copper thin film. CONSTITUTION: A semiconductor substrate(11) having a trench is prepared. A barrier layer(13) is deposited along a step on the resultant structure including the trench. A copper thin film(14,14A) is deposited on the barrier layer along the step on the resultant structure. A heat treatment is performed on the copper thin film in an oxygen atmosphere to grow the copper thin film in a direction that the surface area of the copper thin film extends to make the copper atoms of the copper thin film react with oxygen atoms, thereby filling the trench. An insulation layer is deposited on the resultant structure including a copper oxide layer(14B) formed on the copper thin film. The insulation layer and the copper oxide layer are removed to form a metal interconnection by a planarization process.
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