Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device

摘要

A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NH₄OH), hydrogen peroxide (H₂O₂), and deionized water (H₂O), and the second cleaning solution comprises at least 200 times more deionized water (H₂O) than ammonium hydroxide (NH₄OH) by volume.