METHOD FOR FORMING POLYSILICON PATTERN OF SEMICONDUCTOR DEVICE TO EASILY ELIMINATE RESIDUE LIKE STRINGER REMAINING WHEN MATERIAL LAYER PATTERN IS FORMED

摘要

PURPOSE: A method for forming a polysilicon pattern of a semiconductor device is provided to easily eliminate residue like a stringer remaining when a material layer pattern is formed by forming a polysilicon pattern having a sidewall of a positive slant. CONSTITUTION: A polysilicon layer is formed on a semiconductor substrate(100). An etch stop layer pattern is formed on the polysilicon layer. The polysilicon layer is tilt-etched by using reaction gas including He gas, SF6 gas and Cl2 gas while using the etch stop layer pattern as a mask. An over-etching process is performed on the resultant structure by using reaction gas including Cl2 gas and HBr gas. The polysilicon stringer remaining on the tilt-etched structure is etched by using reaction gas including the reaction gas of the tilt-etch process, He gas and SF6 gas.