Electronic interconnect structure

摘要

A multilevel electronic interconnect structure (50) comprises at least two layers of aluminum conductors (54,56) on and separated by a non-aluminum oxide dielectric material (58); a layer (60) of an adhesion metal on said dielectric material, beneath each conductor; a layer of a barrier metal (62) selected from the group consisting of tantalum, niobium, hafnium, titanium, and zirconium between said adhesion metal layer and each conductor; filled aluminum vias (66) interconnecting said layers of aluminum conductors, said filled aluminum vias being surrounded by said non-aluminum oxide dielectric material; and a layer (68) of said barrier metal beneath each via (66), between said via and an interconnected conductor.