High resolution defect inspection with positron annihilation by simultaneous irradiation of a positron beam and an electron beam

摘要

The purpose of the present invention is to inspect the position, number, and size of fine defects in a variety of solid state materials, including a semiconductor device and metallic materials, with a high spatial resolution of nanometer order. A positron beam from positron source (9) is irradiated onto a relatively wide area of sample (7) and a converging electron beam from electron source (1) is simultaneously irradiated onto a small area of sample (7). The defect location information is obtained from the converged electron beam location information, and the number and size of defects are obtained from the detected information of gamma -rays created by pair annihilation of electrons and positrons and detected by detector (8). This two-dimensional distribution information is displayed on monitor (13).