| 摘要 |
#CMT# #/CMT# The device has two layers e.g. platinum/cobalt layers, formed of magnetic materials and separated by an interposed layer e.g. layer with 1 nanometer of ruthenium, which is made of non-magnetic material. Each magnetic layer includes a magnetization perpendicularly oriented to a plane of the magnetic layers. The non magnetic layer induces an antiferromagnetic coupling force between the magnetic layers whose direction and amplitude attenuate effects of the antiferromagnetic coupling force from magnetostatic origin, where the effects are exerted between the magnetic layers. #CMT#USE : #/CMT# Magnetic device for magnetic recording medium with multi coercive force, spin valve or magnetic tunnel junction, magnetic RAM, reprogrammable logic gate (all claimed). #CMT#ADVANTAGE : #/CMT# The magnetization of the magnetic layers is perpendicularly oriented to the plane of the magnetic layers, thus reducing the dimensions of the magnetic device than systems utilizing planar magnetization structures, and hence providing a compact magnetic device having reduced sensitivity to magnetic disturbances. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic representation of a magnetization curve of a magnetic device. '(Drawing includes non-English language text)' 1, 4 : End states 2, 3 : Intermediate states #CMT#METALLURGY : #/CMT# The interposed layer is made of material e.g. ruthenium, chromium, copper, gold, silver, vanadium and niobium and insulating alloy e.g. silicon dioxide, magnesium oxide, zirconia, titanium oxide, tantalum oxide, chromium oxide, ruthenium oxide or aluminum oxide. The magnetic layers are made of material such as iron, cobalt, nickel, platinum, palladium and copper. The interposed layer and magnetic layers insert an additional layer made of platinum or palladium, between each other. |
