ELECTRO-MECHANICAL NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

An electro-mechanical nonvolatile memory device and a method for manufacturing the same are provided to improve data retention performance by forming a charge trap structure on a sidewall of an electrode pattern. An upper surface of a support substrate(100) has insulation property. A first electrode pattern(102) is formed on the support substrate. A bit line(108) is separated from a surface of a sidewall of the first electrode pattern. The bit line is formed along an exposed surface profile of the first electrode pattern and the support substrate. The bit line is made of a conductive material having elasticity according to a potential difference. A dielectric pattern(110a) is formed on an upper surface of the bit line located on the surface of the substrate. A second electrode pattern is separated from the bit line and is opposite to the first electrode pattern on the dielectric pattern. A charge trap structure is formed on the sidewall and an upper portion of the first electrode pattern.