| 摘要 |
A block mask making method is provided that can improve throughput of a process for exposing a semiconductor device having a plurality of layers. Steps S20-S22 respectively extract blocks including basic figures included in layers of IC data. For example, step S20 extracts a block from a wiring layer, and step S21extracts a block from a gate layer, step S22 extracting a block from a hole layer. In step S23, if the number of blocks extracted by steps S20-S22 is larger than the number of blocks that can be arranged on the block mask, blocks that are used frequently are selected preferentially. Step S24 determines arrangement of a block having a smaller exposure pattern closer to a center of the block mask. Data in which arrangement is fixed is output as block mask making data. |
