发明名称 Semiconductor memory including forming beams connecting the capacitors
摘要 A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of each capacitor is supported by a beam-like insulator at a side portion of the electrode, the side portion being apart from a lower edge of the lower electrode.
申请公布号 US6822280(B2) 申请公布日期 2004.11.23
申请号 US20020286893 申请日期 2002.11.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ITO EIJI;ITO HITOSHI
分类号 H01L21/02;H01L21/8242;H01L27/02;H01L27/108;(IPC1-7):H01L21/108;H01L29/76;H01L29/94;H01L31/119 主分类号 H01L21/02
代理机构 代理人
主权项
地址