发明名称 Half-bridge circuit
摘要 A half-bridge circuit includes: a vertically designed n-conducting first MOS transistor that is integrated in a first semiconductor body having a front side and a rear side; and a vertically designed p-conducting second MOS transistor that is integrated in a second semiconductor body having a front side and a rear side. The first and second transistors are connected in series between a first connection terminal and a second connection terminal. The half-bridge circuit also includes a drive circuit for driving the first and second transistors. The first and second transistors are applied to a common connection plate.
申请公布号 US6822399(B2) 申请公布日期 2004.11.23
申请号 US20020056767 申请日期 2002.01.24
申请人 INFINEON TECHNOLOGIES AG 发明人 FELDTKELLER MARTIN;KIEP ANDREAS
分类号 H01L23/495;(IPC1-7):H05B37/00 主分类号 H01L23/495
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