发明名称 Device and method for providing a tunable semiconductor laser
摘要 A semiconductor laser device including a light reflecting facet positioned on a first side of the semiconductor device, a light emitting facet positioned on a second side of the semiconductor device thereby forming a resonator between the light reflecting facet and the light emitting facet, and an active layer configured to radiate light in the presence of an injection current, the active layer positioned within the resonator. A wavelength selection structure is positioned within the resonator and configured to select a spectrum of the light including multiple longitudinal modes, the spectrum being output from the light emitting facet. Also, an electrode positioned along the resonator and configured to provide the injection current, and a tuning current that adjusts a center wavelength of the spectrum selected by the wavelength selection structure.
申请公布号 US6822982(B2) 申请公布日期 2004.11.23
申请号 US20020214177 申请日期 2002.08.08
申请人 THE FURUKAWA ELECTRIC CO., LTD. 发明人 YOSHIDA JUNJI;TSUKIJI NAOKI
分类号 H01S3/08;H01S3/094;H01S3/10;H01S3/30;H01S5/00;H01S5/022;H01S5/042;H01S5/0625;H01S5/0687;H01S5/10;H01S5/12;H01S5/227;(IPC1-7):H01S3/10 主分类号 H01S3/08
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