发明名称 |
Particle beam biaxial orientation of a substrate for epitaxial crystal growth |
摘要 |
The invention provides a method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure by contacting said structure with an oblique particle beam thereby forming in the structure a nucleating surface having increased desired biaxial orientation. The method can further include a step of epitaxially growing the crystalline formation using the nucleating surface to promote the epitaxial growth. The invention also provides a crystalline structure containing a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam, from 0 to 10 adjacent orientation-transmitting layers, and a crystalline active layer. In this structure, the active layer is oriented in registry with the nucleating surface.
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申请公布号 |
US6821338(B2) |
申请公布日期 |
2004.11.23 |
申请号 |
US20000739391 |
申请日期 |
2000.12.15 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
READE RONALD P.;BERDAHL PAUL H.;RUSSO RICHARD E. |
分类号 |
C30B23/02;C30B25/02;C30B25/18;C30B33/04;(IPC1-7):C30B1/06 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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