发明名称 Particle beam biaxial orientation of a substrate for epitaxial crystal growth
摘要 The invention provides a method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure by contacting said structure with an oblique particle beam thereby forming in the structure a nucleating surface having increased desired biaxial orientation. The method can further include a step of epitaxially growing the crystalline formation using the nucleating surface to promote the epitaxial growth. The invention also provides a crystalline structure containing a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam, from 0 to 10 adjacent orientation-transmitting layers, and a crystalline active layer. In this structure, the active layer is oriented in registry with the nucleating surface.
申请公布号 US6821338(B2) 申请公布日期 2004.11.23
申请号 US20000739391 申请日期 2000.12.15
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 READE RONALD P.;BERDAHL PAUL H.;RUSSO RICHARD E.
分类号 C30B23/02;C30B25/02;C30B25/18;C30B33/04;(IPC1-7):C30B1/06 主分类号 C30B23/02
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