发明名称 |
Etchant |
摘要 |
An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.
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申请公布号 |
US6821452(B2) |
申请公布日期 |
2004.11.23 |
申请号 |
US20030609834 |
申请日期 |
2003.06.27 |
申请人 |
KIKUYAMA HIROHISA;MIYASHITA MASAYUKI;YABUNE TATSUHIRO;OHMI TADAHIRO |
发明人 |
KIKUYAMA HIROHISA;MIYASHITA MASAYUKI;YABUNE TATSUHIRO;OHMI TADAHIRO |
分类号 |
C23F1/24;H01L21/308;H01L21/311;(IPC1-7):C03C15/00 |
主分类号 |
C23F1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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