发明名称 Method and apparatus for switching insulated gate field effect transistors
摘要 In accordance with the present invention, a method of switching first and second parallel-connected insulated gate bipolar transistors (IGBTs) is as follows. Each of the first and second IGBTs are turned on in alternating cycles of a system clock such that in any given cycle of the system clock only one of the first and second IGBTs is turned on.
申请公布号 US6822503(B2) 申请公布日期 2004.11.23
申请号 US20030462000 申请日期 2003.06.11
申请人 FAIRCHILD KOREA SEMICONDUCTOR LTD. 发明人 JANG KI-YOUNG;SUH BUM-SEOK
分类号 H03K17/0812;(IPC1-7):H03K17/62 主分类号 H03K17/0812
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