发明名称 |
Method and apparatus for switching insulated gate field effect transistors |
摘要 |
In accordance with the present invention, a method of switching first and second parallel-connected insulated gate bipolar transistors (IGBTs) is as follows. Each of the first and second IGBTs are turned on in alternating cycles of a system clock such that in any given cycle of the system clock only one of the first and second IGBTs is turned on.
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申请公布号 |
US6822503(B2) |
申请公布日期 |
2004.11.23 |
申请号 |
US20030462000 |
申请日期 |
2003.06.11 |
申请人 |
FAIRCHILD KOREA SEMICONDUCTOR LTD. |
发明人 |
JANG KI-YOUNG;SUH BUM-SEOK |
分类号 |
H03K17/0812;(IPC1-7):H03K17/62 |
主分类号 |
H03K17/0812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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