发明名称 |
Method for forming grooves in the scribe region to prevent a warp of a semiconductor substrate |
摘要 |
The present invention provides a semiconductor device and a manufacturing method thereof which can realize fine processing while preventing a warp of a semiconductor wafer. In forming a plurality of semiconductor elements on a semiconductor wafer, grooves for attenuating stress are formed in scribe regions defined between semiconductor element forming regions. Here, the grooves are formed in the scribe regions except for alignment pattern forming regions such that the alignment pattern forming regions remain in the scribe regions. On the alignment pattern forming regions of the scribe regions, an alignment pattern or a TEG pattern which is used in a photolithography step is formed. |
申请公布号 |
US6821867(B2) |
申请公布日期 |
2004.11.23 |
申请号 |
US20030421927 |
申请日期 |
2003.04.24 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
MATSUURA NOBUYOSHI;KOUNO YASUHIKO;MIURA HIDEO;KUBO MASAHARU |
分类号 |
H01L21/331;H01L21/02;H01L21/301;H01L21/3065;H01L21/336;H01L23/544;H01L29/732;H01L29/737;H01L29/78;(IPC1-7):H01L21/78 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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