METHOD FOR CORRECTING DESIGN PATTERN OF SEMICONDUCTOR CIRCUIT, A PHOTOMASK FABRICATED USING THE CORRECTED DESIGN PATTERN DATA, A METHOD FOR INSPECTING THE PHOTOMASK AND A METHOD FOR GENERATING PATTERN DATA FOR INSPECTION OF PHOTOMASK

摘要

A method for correcting design pattern data of a semiconductor circuit in which, in the middle of miniaturization and high density of a mask pattern being developed, a technique of correction is applied at a practical level in which the correction of design pattern data in the formation of fine patterns on a semiconductor wafer is associated with the correction of design patterns in the fabrication of a photomask.