| 摘要 |
The present invention is characterized by including an electrode formed on surface of a semiconductor substrate, wherein said electrode includes a barrier layer consisting of amorphous or microcrystal expressed by the following expression:(0<X<1; M1: Au, Pt, Ir, Pd, Os, Re, Rh, Ru, Cu, Co, Fe, Ni, V, Cr; M2: Ta, Ti, Zr, Hf, W, Y, Mo, Nb).
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