| 发明名称 |
Semiconductor device, semiconductor substrate, and manufacture method |
| 摘要 |
Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside face of the depression.
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| 申请公布号 |
US6821805(B1) |
申请公布日期 |
2004.11.23 |
| 申请号 |
US20000680054 |
申请日期 |
2000.10.05 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKAMURA SHINJI;ISHIDA MASAHIRO;ORITA KENJI;IMAFUJI OSAMU;YURI MASAAKI |
| 分类号 |
H01L21/18;C30B25/18;H01L21/20;H01L21/205;H01L33/20;H01L33/32;H01S5/02;H01S5/32;H01S5/323;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/18 |
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