发明名称 |
Semiconductor thin film and semiconductor device |
摘要 |
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
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申请公布号 |
US6822262(B2) |
申请公布日期 |
2004.11.23 |
申请号 |
US20020295882 |
申请日期 |
2002.11.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;MITSUKI TORU;MIYANAGA AKIHARU;OGATA YASUSHI |
分类号 |
G02F1/1362;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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