发明名称 |
Method for avoiding carbon and nitrogen contamination of a dielectric insulating layer |
摘要 |
A method for preventing carbon and nitrogen penetration from a deposited overlayer into a dielectric insulating layer to improve a subsequent photolithographic patterning and anisotropic etching process including providing a semiconductor wafer having a process surface including an exposed dielectric insulating layer; and, subjecting the dielectric insulating layer to a hydrogen containing plasma treatment to form a penetration resistance to one of nitrogen containing and carbon containing species.
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申请公布号 |
US6821905(B2) |
申请公布日期 |
2004.11.23 |
申请号 |
US20020209466 |
申请日期 |
2002.07.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
PAN SHING-CHYANG;JENG SHWANG-MING;YU CHEN-HUA;HO GRACE H. |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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