发明名称 |
Process for deposition of semiconductor films |
摘要 |
Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.
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申请公布号 |
US6821825(B2) |
申请公布日期 |
2004.11.23 |
申请号 |
US20020074563 |
申请日期 |
2002.02.11 |
申请人 |
ASM AMERICA, INC. |
发明人 |
TODD MICHAEL A.;HAWKINS MARK |
分类号 |
C23C16/24;C23C16/02;C23C16/42;C30B25/02;H01L21/20;H01L21/205;H01L21/28;H01L21/285;H01L21/316;H01L21/331;H01L21/337;H01L21/425;H01L21/469;H01L21/8238;H01L27/092;H01L29/51;H01L29/737;H01L29/78;H01L31/18;H01L31/20;(IPC1-7):C23C16/24 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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