发明名称 Ion beam apparatus and sample processing method
摘要 For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.
申请公布号 US6822245(B2) 申请公布日期 2004.11.23
申请号 US20010794828 申请日期 2001.02.27
申请人 HITACHI, LTD. 发明人 MUTO HIROYUKI;ISHITANI TOHRU;MADOKORO YUICHI
分类号 C23F4/00;G21K7/00;H01J37/28;H01J37/30;H01J37/304;H01J37/305;H01J37/317;H01L21/302;H01L21/3065;(IPC1-7):G21K5/10;H01J37/08 主分类号 C23F4/00
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