发明名称 |
Ion beam apparatus and sample processing method |
摘要 |
For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.
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申请公布号 |
US6822245(B2) |
申请公布日期 |
2004.11.23 |
申请号 |
US20010794828 |
申请日期 |
2001.02.27 |
申请人 |
HITACHI, LTD. |
发明人 |
MUTO HIROYUKI;ISHITANI TOHRU;MADOKORO YUICHI |
分类号 |
C23F4/00;G21K7/00;H01J37/28;H01J37/30;H01J37/304;H01J37/305;H01J37/317;H01L21/302;H01L21/3065;(IPC1-7):G21K5/10;H01J37/08 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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