发明名称 |
Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element |
摘要 |
A laser apparatus includes a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light; and a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with the first laser light, and emitting second laser light. In addition, the surface-emitting semiconductor element may have a first mirror arranged on one side of the second active layer, and a second mirror may be arranged outside the surface-emitting semiconductor element so that the first and second mirrors form a resonator.
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申请公布号 |
US6822988(B1) |
申请公布日期 |
2004.11.23 |
申请号 |
US20000659456 |
申请日期 |
2000.09.11 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
OKAZAKI YOJI;FUKUNAGA TOSHIAKI |
分类号 |
H01S3/00;H01S3/091;H01S5/00;H01S5/02;H01S5/024;H01S5/028;H01S5/04;H01S5/14;H01S5/183;H01S5/20;H01S5/30;H01S5/32;H01S5/323;H01S5/343;(IPC1-7):H01S3/00 |
主分类号 |
H01S3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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