发明名称 |
Symmetric and complementary differential amplifier |
摘要 |
A complementary differential amplifier includes two differential amplifiers. Each differential amplifier includes two input FETs (or bipolar transistors) having gate terminals coupled to the input terminals of the complementary differential amplifier. Two current load p-type field-effect transistors are each coupled in series between one voltage source and a drain terminal of a respective input FET. A current source FET is coupled in series between a common source terminal of the two input n-type field-effect transistors and a low voltage source. Only two FETs are needed to bias all of the current load and source FETs. A complementary folded cascode stage as well as an inverter stage may also be included.
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申请公布号 |
US6822513(B1) |
申请公布日期 |
2004.11.23 |
申请号 |
US20030446306 |
申请日期 |
2003.05.28 |
申请人 |
AMI SEMICONDUCTOR, INC. |
发明人 |
LI ZHONGMIN;RASMUSSEN BRYCE |
分类号 |
H03F3/45;(IPC1-7):H03F3/45 |
主分类号 |
H03F3/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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