发明名称 METHOD FOR CHARACTERIZING PROCESS STEP AND METHOD FOR FABRICATING DEVICE TO MEASURE VARIATION OF SUBSTRATE WAFER AFTER EACH EXPOSURE AND PROCESS STEP
摘要 <p>PURPOSE: A method for characterizing a process step is provided to measure variation of a substrate wafer after each exposure and process step by comparing a value in a database with the positions of a plurality of reference marks. CONSTITUTION: A pattern expressing a layer of functional portions of a device is exposed to a photosensitive layer formed on a substrate so that a latent pattern is imprinted. The latent pattern on the photosensitive layer is developed to expose the pattern. The substrate is processed. The relative positions of the reference marks on the substrate are measured. Reference information related with the nominal position of the reference marks is compared to characterize a process step performed on the substrate on which the plurality of reference marks are formed.</p>
申请公布号 KR20040098564(A) 申请公布日期 2004.11.20
申请号 KR20040033746 申请日期 2004.05.13
申请人 ASML NETHERLANDS B.V. 发明人 REUHMAN HUISKEN MARIA ELISABETH;DEMOL CHRISTIANUS GERARDUS MARIA;TOLSMA HOITE PIETER THEODOOR
分类号 G03F9/00;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F9/00
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