MAGNETIC RAM CELLS HAVING SPLIT SUB-DIGIT LINES, IN WHICH UNIFORM MAGNETIC FIELD IS REALIZED TO INCREASE INTEGRATION

摘要

PURPOSE: Magnetic RAM cells having split sub-digit lines are provided which is appropriate for increasing integration by realizing uniform magnetic field. CONSTITUTION: An active region(103a) is arranged on a semiconductor substrate. The first and the second word lines(107a,107b) are arranged to cross the active region. Thus, the first and the second access MOS transistors connected to the active region are formed. The active region between the first and the second word lines is a common source region shared by the first and the second access MOS transistors. The active region which is adjacent to the first word line and is located at an opposite side of the common source region corresponds to a drain region of the first access MOS transistor, and the active region which is adjacent to the second word line and is located at an opposite side of the common source region corresponds to a drain region of the second access MOS transistor.