发明名称 MASK ROM CELL, CODING METHOD OF THE SAME, AND MASK ROM
摘要 PURPOSE: A mask ROM(Read Only Memory) cell, a coding method of the same, and a mask ROM are provided to apply user code to the mask ROM cell by transforming the second conductive type of the second region into the first conductive type using counter doping. CONSTITUTION: A mask ROM cell includes the first region and the second region. The first region(110) is formed on a semiconductor substrate. The first region is doped with the first conductive type impurities. The second region(120) is formed on the first region. The second region is doped with the second conductive type impurities. The second region is transformed into the first conductive type region by performing counter doping using the first conductive impurities according to user code.
申请公布号 KR20040098104(A) 申请公布日期 2004.11.20
申请号 KR20030030184 申请日期 2003.05.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, HO BONG
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
代理机构 代理人
主权项
地址