| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory capable of reducing a writing voltage and capable of realizing a large capacity and accelerating. SOLUTION: The nonvolatile semiconductor memory is formed on a semiconductor substrate 11 through a gate insulating film 14, and is cyclically disposed in a first direction on the same plane of the semiconductor substrate, a sectional shape cut by a plane including a direction parallel with the first direction and perpendicular to the semiconductor substrate has an almost triangular floating gate 15 having two inclined planes which contacts the gate insulating film 14 and extend toward the upper direction from a bottom surface parallel with the semiconductor substrate and both ends of the bottom surface and are opposite to each other, and a memory cell comprising two control gates 17 provided by mainly allowing them to each contact the two inclined plates of the floating gate 15 through an integrate insulating film 16, and the floating gate 15 is driven by capacitive coupling with the two control gates 17, thereby enabling to reduce the writing voltage in the nonvolatile semiconductor memory and enabling to solve the problem that the large capacity processing is hardly performed at a high speed. COPYRIGHT: (C)2005,JPO&NCIPI
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