| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device in which impurity concentration can be controlled independently in an overlap region, i.e. an LDD region overlapping a gate electrode, and an offset region, i.e. the LDD region offset from the gate electrode, and the reproducibility of the length of each region is enhanced. SOLUTION: Impurities are implanted in a semiconductor layer 2 using gate electrodes 4 and 5 of second shape formed on a gate insulating film 3 deposited on the semiconductor layer 2 as an impurity implantation mask. Subsequently, impurities are implanted in the semiconductor layer 2 using a gate electrode 9 formed by providing second conductive parts 8 on the opposite sides of the gate electrodes 4 and 5 of second shape as an impurity implantation mask thus forming an overlap region 6 beneath the second conductive part 8. Finally, impurities are implanted in the semiconductor layer 2 using an insulating sidewall 11 formed on the opposite side parts of the gate electrode 9 and the gate electrode 9 as an impurity implantation mask to form an offset region 10 beneath the sidewall 11 thus forming a source region 12 and a drain region 13 on the outside of the offset region 10. COPYRIGHT: (C)2005,JPO&NCIPI
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