发明名称 |
SEMICONDUCTOR MEMORY CELL AND METHOD FOR PRODUCING SAID CELL |
摘要 |
The invention relates to a semiconductor memory cell and a method for producing said cell. According to said method, the capacity (CFe) of a ferroelectric capacitor assembly, which is formed by the contact and/or a region of an essentially constant potential between the gate isolation region (GOX) and a ferroelectric region (16), the ferroelectric region (16) and an upper gate electrode (18), is configured in a reduced manner relative to conventional conditions and/or relative to the capacity (CGOX) of a gate insulation capacitor assembly, which is formed by the border surface between a channel region (K) and the gate insulation region (GOX), the gate insulation region (GOX) and the contact and/or the region of an essentially constant potential between the gate isolation region (GOX) and the ferroelectric region (16). |
申请公布号 |
WO2004077574(A3) |
申请公布日期 |
2004.11.18 |
申请号 |
WO2004DE00365 |
申请日期 |
2004.02.27 |
申请人 |
INFINEON TECHNOLOGIES AG;PINNOW, CAY-UWE;MIKOLAJICK, THOMAS |
发明人 |
PINNOW, CAY-UWE;MIKOLAJICK, THOMAS |
分类号 |
H01L21/28;H01L21/336;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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