发明名称 |
A NON-VOLATILE MEMORY HAVING A BIAS ON THE SOURCE ELECTRODE FOR HCI PROGRAMMING |
摘要 |
Each cell (60, 62, 64, 66) of a memory (10) is programmed by first using a source bias that is typically effective for programming the cells (60-66). If a cell (60-66) is not successfully programmed in the first attempt, that is typically because a number of cells (60-66) on the same column (74, 78) as that of the cell (60-66) that did not successfully program have a relatively low threshold voltage, a low enough threshold voltage that these memory cells (60-66) are biased, even with grounded gates, to be conductive. The vast majority of the cells (60-66) do not have this problem, but it is common for there to be a few memory cells (60-66) that do have this low threshold voltage characteristic. To overcome this, a different source bias is applied during subsequent programming attempts. Thus, the vast majority of the cells (60-66) are programmed at the faster programming condition, and only the few that need it are programmed using the slower approach. |
申请公布号 |
WO2004100216(A2) |
申请公布日期 |
2004.11.18 |
申请号 |
WO2004US11870 |
申请日期 |
2004.04.16 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;CHOY, JON, S.;CHINDALORE, GOWRISHANKAR |
发明人 |
CHOY, JON, S.;CHINDALORE, GOWRISHANKAR |
分类号 |
G11C11/34;G11C16/04;G11C16/10;G11C16/30;H01L |
主分类号 |
G11C11/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|