| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to be capable of reducing the edge damage of the gate electrode by using an improved wafer bias. CONSTITUTION: An insulating layer and a conductive layer are sequentially formed on a semiconductor substrate. A gate electrode is formed by selectively etching the conductive layer. At this time, the gate electrode is formed by using two-step etching processes. That is, the conductive layer is anisotropically etched by using TM(Time Modulation) bias, and then over-etched by using CW(Continuous Wave) bias.
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