| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of suppressing the influence of the leak current of a memory cell in a memory cell array, and improving the reliability of read data and the stability of the operation. <P>SOLUTION: In the memory cell array 200, the source lines arranged for respective rows are controlled independently of each other by the source potential control circuits 160, and in a case of reading, a source line connected to a selection memory cell is kept at a common potential V<SB>SS</SB>, and the other source lines are kept at the precharge potential of the bit line, for example, at the power supply voltage V<SB>DD</SB>. Therefore, among a plurality of memory cells connected to the selection bit line, the leak current of the memory cells other than the selection memory cells is substantially reduced, and a read data error caused by the leak current can be prevented, and an influence of the variations in operational condition or in the process can be suppressed by improving the design margin, and stable reading operation can be realized. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
