| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic detector manufacturing method capable of forming a structure of narrowing down a current passway easily with high accuracy. SOLUTION: A resist layer 40 provided with a cutout 40 provided at its lower part is formed on a multilayered film 21 deposited on a lower electrode layer 20, and a first gap layer 28 is formed on the top surface of a part of the multilayered film 21 that includes the inside of the cutout 40a and is not covered with the resist layer 40. By this setup, a prescribed space T1 can be provided to the first gap layer 28 in the widthwise direction of a track. In a following process, both end faces of the multilayered film 21 and the first gap layer 28 in the widthwise direction of a track are cut off. Therefore, the prescribed space T1 provided in the first gap layer 28 can be formed to a very small size with high accuracy, and the current pathway narrowing structure can be easily formed, so that the magnetic detector having a large resistance change volume (ΔR) and a high regeneration output can be manufactured. COPYRIGHT: (C)2005,JPO&NCIPI
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